1.

Conference Proceedings
Conference Proceedings
1. Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
Soloviev, S.I. ; Sandvik, P. ; Arthur, S.D. ; Matocha, K.S. ; Maximenko, S.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.427-430,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Selective Doping of 4H-SiC by Aluminum/Boron Co-Diffusion
Gao, Ying ; Soloviev, S.I. ; Wang, X. ; Tin, C.C. ; Sudarshan, T.S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
3.

Conference Proceedings
Conference Proceedings
3. Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
Soloviev, S.I. ; Gao, Y. ; Khlebnikov, Y. ; Khlebnikov, I.I. ; Sudarshan, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.557-560,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
Soloviev, S.I. ; Gao, Y. ; Khlebnikov, Y. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.557-560,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393