1.

Conference Proceedings
Conference Proceedings
1. Factors Governing the Photoluminescence Yield of Erbium Implanted Silicon
Jantsch, W. ; Przybylinska, H. ; Skierbiszewski, C. ; Lanzerstorfer, S. ; Palmetshofer, L.
Pub. info.: Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.101-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 422
2.

Conference Proceedings
Conference Proceedings
2. Comprehensive Study of Anomalous Conduction Band Structure of InxGa1-xAs1-yNy
Skierbiszewski, C. ; Perlin, P. ; Wisniewski, P. ; Presz, A. ; Suski, T. ; Geisz, J. ; Jantsch, W. ; Mars, D.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
3.

Conference Proceedings
Conference Proceedings
3. High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates
Knap, W. ; Borovitskaya, E. ; Shur, M. S. ; Gaska, R. ; Brandt, B. ; Maude, D. ; Frayssinet, E. ; Lorenzini, P. ; Grandjean, N. ; Massies, J. ; Yang, J. W. ; Hu, X. ; Simin, G. ; Khan, M. Asif ; Skierbiszewski, C. ; Prystawko, P. ; Grzegory, I. ; Porowski, S. ; Karczewski, G.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
4.

Conference Proceedings
Conference Proceedings
4. Two-Dimensional Electron Gas Scattering Mechanisms in AlGaN/GaN Heterostructures
Borovitskaya, E. ; Knap, W. ; Shur, M. S. ; Gaska, R. ; Frayssinet, E. ; Lorenzini, P. ; Grandjen, N. ; Baumont, B. ; Massies, J. ; Skierbiszewski, C. ; Prystawko, P. ; Leszczynski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
5.

Conference Proceedings
Conference Proceedings
5. Growth and characterization of AllnN/GalnN quantum wells for high-speed intersubband devices at telecommunication wavelengths (Invited Paper) [6121-09]
Skierbiszewski, C. ; Cywinski, G. ; Siekacz, M. ; Feduniewicz-Zmuda, A. ; Nevou, L. ; Doyennette, L. ; Tchernycheva, M. ; Julien, F. H. ; Smalc, J. ; Prystawko, P. ; Krysko, M ; Grzanka, S ; Grzegory, I ; Domagata, J. Z. ; Remmele, T ; Albercht, M ; Porowski, S
Pub. info.: Gallium Nitride Materials and Devices.  pp.612109-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121
6.

Conference Proceedings
Conference Proceedings
6. Potential of MBE for gallium nitride based lasers (Invited Paper) [5958-38]
Porowski, S. ; Skierbiszewski, C.
Pub. info.: Lasers and Applications.  pp.59580Z-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5958
7.

Conference Proceedings
Conference Proceedings
7. High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates
Perlin, P. ; Leszczynski, M. ; Prystawko, P. ; Czernetzki, R. ; Wisniewski, P. ; Weyher, J.L. ; Nowak, G. ; Borysiuk, J. ; Gorczyca, L. ; Swietlik, T. ; Franssen, G. ; Bering, A. ; Skierbiszewski, C. ; Grzegory, I. ; Suski, T. ; Porowski, S.
Pub. info.: Novel In-Plane Semiconductor Lasers III.  pp.288-296,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5365