1.

Conference Proceedings
Conference Proceedings
1. Annealing of Silicon Implantation Damage in Indium Phosphide
Simpson,P.J. ; Akano,U.G. ; Schultz,P.J. ; Mitchell,I.V.
Pub. info.: Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary.  Pt.3  pp.1435-1438,  1992.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 105-110
2.

Conference Proceedings
Conference Proceedings
2. Gas and heat treatment effects on the defect structure of a-SiC:H films
Friessnegg,T. ; Boudreau,M. ; Mascher,P. ; Simpson,P.J. ; Puff,W.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.709-714,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Ion Implantation Damage in Silicon Studied Using Slow Positrons,RBS and Infrared Absorption
Simpson,P.J. ; Vos,M. ; Mitchell,I.V. ; Wu,C. ; Schultz,P.J.
Pub. info.: Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary.  Pt.3  pp.1439-1442,  1992.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 105-110
4.

Conference Proceedings
Conference Proceedings
4. Depth Profiling of Defects In Low Temperature MBE-Grown Silicon
Jackrnan,T.E. ; Aers,C.C. ; McCailrey,J.P. ; Britton,D. ; Willutzkl,P. ; Schultz,P.J. ; Simpson,P.J. ; Mascher,P.
Pub. info.: Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary.  Pt.1  pp.301-308,  1992.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 105-110