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32 results

Conference Proceedings

1. Physics of GaN devices (Keynote Paper)

Shur, M. S.

Pub. info.:	Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA. pp.248-255, 2005. Bellingham, Washington. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5844

Conference Proceedings

2. 1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

Rumyantsev, S. L. ; Shur, M. S. ; Knap, W. ; Dyakonova, N. ; Pascal, F. ; Hoffman, A. ; Ghuel, Y. ; Gaquiere, C. ; Theron, D.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.277-285, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

3. Electron transport in the III-V nitride alloys

Foutz, B. E. ; O'Leary, S. K. ; Shur, M. S. ; Eastman, L. F.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.445-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

4. Physics of Below Threshold Current Distribution in a-Si:H TFTs

Slade, H. C. ; Shur, M. S. ; Deane, S. C. ; Hack, M.

Pub. info.:	Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A.. pp.257-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	420

Conference Proceedings

5. Temperature and Frequency Dependent Characteristics of Amorphous Silicon Thin Film Transistors

Slade, H. C. ; Shur, M. S. ; Hack, M.

Pub. info.:	Amorphous silicon technology, 1995 : Symposium held April 18-21, 1995, San Francisco, California, U.S.A.. pp.725-, 1995. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	377

Conference Proceedings

6. GaN and Related Materials for High-Power Applications

Shur, M. S.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.15-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

7. Double-Channel AlGaN/GaN Heterostructure Field-Effect Transistor

Gaska, R. ; Shur, M. S. ; Yang, J. W. ; Fjeldly, T. A.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.9-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

8. Analytical Theory of Electron Mobility and Drift Velocity in GaN

Gelmont, B. L. ; Shur, M. S. ; Stroscio, M.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.609-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

9. Velocity Overshoot and Ballistic Electron Transport in Wurtzite Indium Nitride

Foutz, B. E. ; O'Leary, S. K. ; Shur, M. S. ; Eastman, L. F. ; Bhapkar, U. V.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.821-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

10.

Conference Proceedings

10. The Velocity-Field Characteristic of Indium Nitride

O'Leary, S. K. ; Foutz, B. E. ; Shur, M. S. ; Eastman, L. F. ; Bhapkar, U. V.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.845-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

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