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Conference Proceedings

1. Demonstration and device design consideration of Vth-controllable independent double-gate MOSFET (4-Terminal XMOS) Inveted

Masahara, M. ; Liu, Y.-X. ; Sakamoto, K. ; Endo, K. ; Matsukawa, T. ; Ishii, K. ; Sekigawa, T. ; Koike, H. ; Suzuki, E.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.261-272, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

2. Initial Buffer Layers on the Growth of InGaP on Si by MBE

Kawanami, H. ; Ghosh, S. ; Sakata, I. ; Sekigawa, T.

Pub. info.:	Thin films - structure and morphology : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.33-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	441

Conference Proceedings

3. Si surface Preparation With Si Beam Irradiation on the Growth of III-V on Si

Kawanami, H. ; Baskar, K. ; Sakata, I. ; Sekigawa, T.

Pub. info.:	Thin-film structures for photovoltaics : symposium held December 2-5, 1997, Boston, Massachusetts, U.S.A.. pp.61-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	485

Conference Proceedings

4. A formation of SiO2/4H-SiC interface by oxidizing deposited poly-Si and high-temperature hydrogen annealing

Fukuda, H. ; Sakamoto, K. ; Nagai, K. ; Sekigawa, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.105-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

5. Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures

Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Nagai, K. ; Sekigawa, T. ; Okushi, H. ; Yoshida, S. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1283-1286, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. Correlation Between Minority Carrier Lifetime and Diffusion Coefficient in Cast Polycrystalline Silicon Wafers

Suzuki, E. ; Tamura, K. ; Onishe, K. ; Sekigawa, T.

Pub. info.:	Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices. pp.151-162, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-33

Conference Proceedings

7. Effect of Post-Oxidation-Annealing in Hydrogen on SiO2/4H-SiC Interface

Suzuki, S. ; Fukuda, K. ; Okushi, H. ; Nagai, K. ; Sekigawa, T. ; Yoshida, S. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1073-1076, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

8. Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1235-1238, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.253-256, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

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Conference Proceedings

10. Molecular Beam Epitaxy of InGap Films Grown on Si(001) Substrates with Various Kinds of Initial Buffer Layers

Kawanami, H. ; Sekigawa, T.

Pub. info.:	Evolution of epitaxial structure and morphology : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.147-, 1996. Pittsburgh, Pennsylvania. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	399

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Author: Sekigawa, T.