1.

Conference Proceedings
Conference Proceedings
1. COMPARISON OF GaAs METALLIZATION SYSTEMS FOR HIGH TEMPERATURE APPLICATIONS
Scofield, J. ; Liu, S. ; Smith, S.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.247-252,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC DMOSFETs for High Speed Switching Applications
Ryu, S. H. ; Krishnaswami, S. ; Das, M. ; Richmond, J. ; Agarwal, A. ; Palmour, J. ; Scofield, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.797-800,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN
Garter, M. ; Birkhahn, R. ; Steckl, A. J. ; Scofield, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G11.3.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Defect Dominant Junction Characteristics of 4H-SiC p+/n Diodes
Scofield, J. ; Dunn, M. ; Reinhardt, K. ; Yeo, Y. K. ; Hengehold, R.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.57-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
5.

Conference Proceedings
Conference Proceedings
5. Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC
Liu, S. ; Potts, G. ; Scofield, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1021-1024,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. Improved AlNi Ohmic Contacts to p-Type SiC
Tsao, B.H. ; Liu, S. ; Scofield, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.841-844,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Technical Paper
Technical Paper
7. Temperature and Thickness Dependence of Ti/AiNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiC
Tsao, B. ; Lawson, J. ; Scofield, J.
Pub. info.: AIAA meeting papers on disc.  2005.  [Reston, Va.].  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : International Energy Conversion Engineering Conference and Exhibit (IECEC)
Ser. no.: 3rd
8.

Technical Paper
Technical Paper
8. Design and Fabrication of a Monolithically Integrated Pressure and Temperature Sensor Using MEMS Processes for Wide Band Gap Materials
Dasgupta, S. ; Scofield, J. ; Boyd, J.
Pub. info.: A collection of technical papers : AIAA Space 2001 Conference & Exposition, Albuquerque, New Mexico, 28-30 August 2001.  v. 2  pp.864-872,  2001.  Reston, VA.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA Space Conference and Exposition
Ser. no.: 2001