1.

Conference Proceedings
Conference Proceedings
1. MISFIT DISLOCATION NUCLEATION SITES AND METASTABILITY ENHANCEMENT OF SELECTIVE Si1-xGex/Si GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION
Liu, C. W. ; Strum, J. C. ; Schwartz, P. V. ; Fitzgerald, E. A.
Pub. info.: Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.85-90,  1992.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 238
2.

Conference Proceedings
Conference Proceedings
2. ELECTRON-BEAM-INDUCED-CURRENT (EBIC) IMAGING OF DEFECTS IN Si1-XGeX MULTILAYER STRUCTURES
Sturm, J. C. ; Xiao, X. ; Garone, P. M. ; Schwartz, P. V.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.341-346,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
3.

Conference Proceedings
Conference Proceedings
3. GROWTH AND DOPING KINETICS OF GeXSi1-X STRUCTURES BY LIMITED REACTION PROCESSING
Garone, P. M. ; Sturm,. J. C. ; Schwartz, P. V. ; Schwarz, S. A. ; Wilkens, B.
Pub. info.: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.41-46,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 146