1.

Conference Proceedings
Conference Proceedings
1. Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
H. Tsuge ; S. Ushio ; S. Sato ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.7-10,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching
S. Ushio ; A. Adachi ; K. Matsuda ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.777-780,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
S. Ushio ; T. Karaki ; K. Hagiwara ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.573-576,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth
S. Ushio ; Y. Kutsuma ; A. Yoshii ; N. Tamai ; N. Ohtani
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.601-604,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
S. Ushio ; K. Nakanishi ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.577-580,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
S. Ushio ; T. Fujimoto ; H. Tsuge ; M. Katsuno ; S. Sato
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.390-393,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780