1.

Conference Proceedings
Conference Proceedings
1. Silicon Carbide-Silicon Dioxide Transition Layer Mobility
S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.449-452,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation
S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.457-460,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
D.B. Habersat ; A.J. Lelis ; J.M. McGarrity ; F.B. McLean ; S. Potbhare
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.743-746,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
S. Potbhare ; N. Goldsman ; G. Pennington ; A. Lelis ; J.M. McGarrity
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.847-850,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Drain Current Saturation in 4H-SiC MOSFETs
G. Pennington ; S. Potbhare ; N. Goldsman ; D. Habersat ; A. Lelis ; J.M. McGarrity ; C. Ashman
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.811-814,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
6.

Conference Proceedings
Conference Proceedings
6. Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
D.B. Habersat ; A.J. Lelis ; S. Potbhare ; N. Goldsman
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.769-772,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs
S. Potbhare ; N. Goldsman ; A. Akturk ; A.J. Lelis ; R. Green
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.805-808,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
S. Potbhare ; N. Goldsman ; A. Akturk ; A.J. Lelis
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1163-1166,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
S. Potbhare ; A. Akturk ; N. Goldsman ; A.J. Lelis ; S. Dhar
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.975-978,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648