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12 results

Conference Proceedings

1. Color Chart for Thin SiC Films Grown on Si Substrates

L. Wang ; S. Dimitrijev ; G. Walker ; J.S. Han ; A. Iacopi

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.279-282, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes

J.S. Han ; P. Tanner ; S. Dimitrijev ; Q. Shuang ; Y. Shen

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.1111-1114, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

3. Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation

L. Wang ; S. Dimitrijev ; A. Iacopi ; L. Hold ; G. Walker

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.205-208, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors

H. Amini Moghadam ; S. Dimitrijev ; J.S. Han ; A. Aminbeidokhti ; D. Haasmann

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.603-606, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

5. Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

H. Amini Moghadam ; S. Dimitrijev ; J.S. Han

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.710-713, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures

D. Haasmann ; S. Dimitrijev ; J.S. Han ; A. Iacopi

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.627-630, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

7. Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

P. Tanner ; S. Dimitrijev ; H. Amini Moghadam ; A. Aminbeidokhti ; J.S. Han

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.997-1000, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors

H.A. Moghadam ; S. Dimitrijev ; J.S. Han ; D. Haasmann

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.167-172, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

Conference Proceedings

9. High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing

Z.-Q. Yao ; H.B. Harrison ; S. Dimitrijev ; Y.T. Yeow

Pub. info.:	Microelectronics technology and process integration : 20-21 October 1994, Austin, Texas. pp.265-270, 1994. Bellingham, WA. Society of Photo-optical Instrumentation Engineers
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2335

10.

Conference Proceedings

10. Model for the growth of oxides in N₂O

S. Dimitrijev ; H.B. Harrison ; D.R. Sweatman

Pub. info.:	Microelectronics technology and process integration : 20-21 October 1994, Austin, Texas. pp.271-281, 1994. Bellingham, WA. Society of Photo-optical Instrumentation Engineers
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2335

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Author: S. Dimitrijev