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21 results

Conference Proceedings

1. Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modelling of Resistivity Measurements

Rambach, M. ; Frey, L. ; Bauer, A.J. ; Ryssel, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.827-830, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. TRACE ANALYSIS OF SILICON SURFACES USING ANGLE- DEPENDENT TOTAL-REFLECTION X-RAY FLUORESCENCE

Streckfuss, N. ; Frey, L. ; Pichler, P. ; Kuegel, M. ; Zielonka, G. ; Ryssel, H.

Pub. info.:	Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing. pp.222-231, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-15

Conference Proceedings

3. Kinetics of Chemical Vapor Depostion of Titanium Nitride

Popovska, N. ; Poscher, S. ; Tichy, P. ; Emig, G. ; Ryssel, H.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.592-599, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

Conference Proceedings

4. Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing

Rambach, M. ; Bauer, A. J. ; Frey, L. ; Friedrichs, P. ; Ryssel, H.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.621-624, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. Vacancy-Nitrogen Complexes in Float-Zone Silicon

Quast, F. ; Pichler, P. ; Ryssel, H. ; Falster, R.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.156-163, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

6. INTERACTION BETWEEN Co AND SiO2 DURING ION-BEAM MIXING AND RAPID THERMAL ANNEALING

Dehm. C. ; Kasko, I. ; Burte, E. P. ; Ryssel, H.

Pub. info.:	Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.. pp.917-922, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	260

Conference Proceedings

7. INFLUENCE OF LOW-DOSE ION-BEAM MIXING ON GoSi2 FORMATION

Kasko, I. ; Dehm, C. ; Ryssel, H.

Pub. info.:	Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.. pp.289-294, 1992. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	268

Conference Proceedings

8. RELAXATION BEHAVIOR OF METASTABLE As AND P CONCENTRATIONS IN Si AFTER PULSED AND CW LASER ANNEALING

Goetzlich, J. ; Tsien, P. H. ; Ryssel, H.

Pub. info.:	Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A.. pp.235-240, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	23

Conference Proceedings

9. 15 Thin HfxTiySizO Films with Varying Hf to Ti Contents as Candidates for High-k Dielectrics

Bauer, A. G. ; Paskaleva, A. ; Lemberger, M. ; Frey, L. ; Ryssel, H.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.125-132, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

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Conference Proceedings

10. AN INVESTIGATION OF VACANCY CONCENTRATIONS IN BULK SILICON

Zimmermann, Horst ; Ryssel, H.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.31-36, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

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