1.

Conference Proceedings
Conference Proceedings
1. Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
Rowland,L.B. ; ,A.A.Burk.Jr. ; Brandt,C.D.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.115-118,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC Gate Turn-Off(GTO)Thyristor Development
Casady,J.B. ; Agarwal,A.K. ; Rowland,L.B. ; Siergiej,R.R. ; Seshadri,S. ; Mani,S. ; Barrows,J. ; Piceone,D. ; Sanger,P.A. ; Brandt,C.D.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1069-1072,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. 1400 V 4H-SiC Power MOSFETs
Agarwal,A.K. ; Casady,J.B. ; Rowland,L.B. ; Valek,W.F. ; Brandt,C.D.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.989-992,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
Rutsch,G. ; Devaty,R.P. ; Langer,D.W. ; Rowland,L.B. ; Choyke,W.J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.517-520,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Time-Resolved ODMR Measurements on the "Yellow Luminescence"in MOCVD-Grown GaN Films
Koschnick,F.K. ; Spaeth,J.-M. ; Glaser,E.R. ; Doverspike,K. ; Rowland,L.B. ; Gaskill,D.K. ; Wickenden,D.K.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.37-42,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201