1.

Conference Proceedings
Conference Proceedings
1. Carrier Capture and Recombination at Localized States in InGaN/GaN Light-Emitting Diodes
Cac, X.A. ; LeBoeuf, S.F. ; Rowland, L.B. ; Garrett, J.L. ; Arthur, S.D. ; Merfeld, D.W.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.166-173,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
Fedison, J.B. ; Cowen, C.S. ; Garrett, J.L. ; Downey, E.T. ; Kretchmer, J.W. ; Klinger, R.L. ; Peters, H.C. ; Tucker, J.B. ; Matocha, K.S. ; Rowland, L.B. ; Arthur, S.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1265-1268,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Electrical Instability Suppression in 4H-SiC Power MESFETs
Tucker, J.B. ; Beaupre, R.A. ; Zhang, A.P. ; Garrett, J.L. ; Rowland, L.B. ; Kaminsky, E.B. ; Kretchmer, J.W. ; Vertiatchikh, A. ; Eastman, L.F. ; Allen, A.F. ; Edward, B.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.347-362,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
4.

Conference Proceedings
Conference Proceedings
4. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Stahlbush, R. ; Fedison, J.B. ; Arthur, S.D. ; Rowland, L.B. ; Kretchmer, J.W. ; Wang, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.427-430,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Ha, S. ; Mieszkowski, P. ; Rowland, L.B. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.231-234,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
Los, A.V. ; Mazzola, M.S. ; Kajfez, D. ; McDaniel, B.T. ; Smith, C.E. ; Kretchmer, J. ; Rowland, L.B. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1193-1196,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Ha, S. ; Mieszkowski, P. ; Rowland, L.B. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.231-234,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Stahlbush, R.E. ; Fedison, J.B. ; Arthur, S.D. ; Rowland, L.B. ; Kretchmer, J.W. ; Wang, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.427-430,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393