1.

Conference Proceedings
Conference Proceedings
1. Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
Persson,P.O.A. ; Wahab,Q. ; Hultman,L. ; Nordell,N. ; Schoner,A. ; Rottner,K. ; Olsson,E. ; Linnarsson,M.K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.413-416,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Studies of the Ambient Dependent Inversion Capacitance of Catalytic Metal-Oxide-Silicon Carbide Devices Based on 6H- and 4H-SiC Material
Tobias,P. ; Baranzahi,A. ; Lundstrom,I. ; Schoner,A. ; Rottner,K. ; Karlsson,S. ; Martensson,P. ; Spetz,A.Lloyd
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1089-1092,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
Dahlquist,F. ; Zetterling,C.-M. ; Ostling,M. ; Rottner,K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1061-1064,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268