1.

Conference Proceedings
Conference Proceedings
1. HYDROGEN PASSIVATION OF Si AND Be DOPANTS IN InAlAs
Roos, G. ; Johnson, N. M. ; Pao, Y. C. ; Harris Jr., J. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.667-672,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. HYDROGEN PASSIVATION OF DEFECTS IN InGaAs/A1XGa1-Xas QUANTUM WELLS
Lord, S. M. ; Roos, G. ; Pezeshki, B. ; Harri Jr., J., S,. ; Johnson, N. M.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.881-886,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
3.

Conference Proceedings
Conference Proceedings
3. DONOR REACTIVATION KINETICS AND HYDROGEN REDISTRIBUTION IN THE SPACE CHARGE LAYER OF N-TYPE SILICON
Wu, Y.-A. ; Roos, G. ; Johnson, N. M. ; Herring C.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.449-454,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
4.

Conference Proceedings
Conference Proceedings
4. HYDROGEN PASSIVATION AND REACTIVATION OFDX CENTERS IN Se-DOPED AND Si-DOPED A1GaAs --A COMPARISON
Roos, G. ; Johnson, N. M. ; Herring C. ; Harris Jr., J. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.419-424,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
5.

Conference Proceedings
Conference Proceedings
5. HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON
Pensl, G. ; Roos, G. ; Stolz, P. ; Johnson, N. M. ; Holm, C.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.241-246,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
6.

Conference Proceedings
Conference Proceedings
6. Performance assessment of a pendant-geometry CT scanner for breast cancer detection
Boone, J. M. ; Kwan, A. L. C. ; Nelson, T. R. ; Shah, N. ; Burkett, G. ; Seibert, J. A. ; Lindfors, K. K. ; Roos, G.
Pub. info.: Medical Imaging 2005: Physics of Medical Imaging.  pp.319-323,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5745