1.

Conference Proceedings
Conference Proceedings
1. 14 Dose loss and diffusion in BF2-implanted silicon during Rapid Thermal Annealing
Dokumaci, O. ; Ronsheim, P. ; Hegde, S. ; Cobral, C., Jr.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.105-110,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. Sub-30 nm Abrupt Junction Formation in Strained Si/Si 1-xGe x, CMOS Device
Lee, K.L. ; Cardone, F. ; Saunders, P. ; Kozlowski, P. ; Ronsheim, P. ; Zhu, H. ; Li, J. ; Chu, J. ; Chan, K. ; Ieong, M.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.71-81,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-01
3.

Conference Proceedings
Conference Proceedings
3. Transient Enhanced Diffusion and Dose Loss of Indium in Silicon
Dokumaci, O. ; Ronsheim, P. ; D'emic, C. ; Domenicucci, A. G. ; Hegde, S. ; Kozlowski, P. ; Wong, H-S. P.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.205-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
4.

Conference Proceedings
Conference Proceedings
4. (14.1) 10:05 - 10:25AM - Retardation of Arsenic Diffusion in Silicon-Germanium by co-Implantation
Dokumaci, O. ; Ronsheim, P. ; Mocuta, A. ; Mocuta, D. ; Kozlowski, P. ; Chidambarrao, D. ; Saunders, P. ; Chen, H. (IBM)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.893-902,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
5.

Conference Proceedings
Conference Proceedings
5. Status of 300 mm SOI material: comparisons with 200 mm
Hovel, H. ; Alnionte, M. ; Tsai, P. ; Lee, J.D. ; Maurer, S. ; Kleinhenz, R. ; Schepis, D. ; Murphy, R. ; Ronsheim, P. ; Domemcucci, A. ; Rettinger, J. ; Sadana, D.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.75-80,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
6.

Conference Proceedings
Conference Proceedings
6. Semiconductor Analysis And the 21st Century Fab
Dziobkowski, C. ; Bruley, J. ; Coffin, J. ; Falcon, D. ; Flaitz, P. ; Klymko, N. ; McMurray, J. ; Ronsheim, P. ; Wildman, H. ; Zaitz, M.
Pub. info.: Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology.  pp.580-592,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-17