1.

Conference Proceedings
Conference Proceedings
1. Influence of the Spin-Orbit Split-Off Band on the Dwell Time of Holes above In/AlAs/InGaAs/InAlAs and InP/InGaAs/InP Quantum Wells
Ekbote, S. ; Garber, B. ; Cahay, M. ; Roenker, K.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.182-200,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
2.

Conference Proceedings
Conference Proceedings
2. Electromigration-Induced Resistance Changes in Gold Thin Film Metallization in III-V Devices
Bai, S. ; Roenker, K.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.222-237,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
3.

Conference Proceedings
Conference Proceedings
3. Tunneling Properties of Holes Across InP/InGaAs and AlCaAs/GaAs Heterointerfaces in the Burnt-Foreman Formalism
Ekbote, S. ; Cahay, M. ; Roenker, K.
Pub. info.: Advanced luminescent materials and quantum confinement : proceedings of the international symposium.  pp.333-347,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-22
4.

Conference Proceedings
Conference Proceedings
4. Holes Across InAlAs/InGaAs and InP/InGaAs Interfaces
Ekbote, S. ; Cahay, M. ; Roenker, K.
Pub. info.: Proceedings of the Fifth International Symposium on Quantum Confinement : nanostructures.  pp.597-617,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-19
5.

Conference Proceedings
Conference Proceedings
5. Effective Diffusion Coefficient of Minority Carriers in the Base of Graded Heterojunction Bipolar Transistors in the Presence of Self-Heating Effects
Kumar, T. ; Cahay, M. ; Roenker, K.
Pub. info.: Proceedings of the Third International Symposium on Quantum Confinement: Physics and Applications.  pp.304-319,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-17
6.

Conference Proceedings
Conference Proceedings
6. Bias Dependence of the Transmission Coefficient of Holes Through the Abrupt Emitter-Base Junction of a In0.52Al0.48As/In0.53Ga0.47As Pnp Heterojunction Bipolar Transistor
Kumar, T. ; Cahay, M. ; Roenker, K.
Pub. info.: Proceedings of the Fourth International Symposium on Quantum Confinement : nanoscale materials, devices, and systems.  pp.444-461,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-11