1.

Conference Proceedings
Conference Proceedings
1. Intrinsic Mobility of Conduction Electrons in 4H-SiC
Pernot, J. ; Contreras, S. ; Neyret, E. ; Cioccio, L.Di. ; Zawadzki, W. ; Robert, J.L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.483-486,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
Pernot, J. ; Camassel, J. ; Peyre, H. ; Contreras, S. ; Robert, J.L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.403-406,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
3.

Conference Proceedings
Conference Proceedings
3. Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
Terziyska, P. ; Pernot, J. ; Contreras, S. ; Robert, J.L. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.399-402,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436