1.

Conference Proceedings
Conference Proceedings
1. The Nature of Trigonal Centers in Iron-Doped p-type Silicon
Gehlhoff,W. ; Irmscher,K. ; Rehse,U.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.1233-1238,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Transition-metal acceptor pairs in silicon
Emanuelsson,P. ; Omling,P. ; Grimmeiss,H.G. ; Cehlhoff,W. ; Kreissl,J. ; Irmscher,K. ; Rehse,U.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.137-142,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
3.

Conference Proceedings
Conference Proceedings
3. Electronic Characterization of Defects in Iron-Doped p-Type Silicon
Gehlhoff,W. ; Irmscher,K. ; Rehse,U.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.373-378,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41