1.

Conference Proceedings
Conference Proceedings
1. Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers
Jorda, X. ; Tournier, D. ; Rebollo, J. ; Millan, J. ; Godignon, P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.929-932,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Heat generation analysis in SOI LDMOS power transistors
Roig, J. ; Flores, D. ; Urresti, J. ; Hidalgo, S. ; Rebollo, J.
Pub. info.: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment.  pp.167-178,  2005.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 185
3.

Conference Proceedings
Conference Proceedings
3. Ab Initio Calculations of B Diffusion in SiC
Rurali, R. ; Hernandez, E. ; Godignon, P. ; Rebollo, J. ; Ordejon, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.553-556,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
Mihaila, A. ; Udrea, F. ; Godignon, P. ; Trajkovic, T. ; Brezeanu, G. ; Rebollo, J. ; Millan, J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.891-894,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. First-Principles Study of O Adsorption at SiC Surface
Rurali, R. ; Wachowicz, E. ; Ordejon, P. ; Godignon, P. ; Rebollo, J. ; Hyldgaard, P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1293-1296,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Ab Initio Calculations of B Diffusion in SiC
Rurali, R. ; Hernandez, E. ; Godignon, P. ; Rebollo, J. ; Ordejon, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.553-556,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping
Rurali, R. ; Hernandez, E. ; Godignon, P. ; Rebollo, J. ; Ordejon, P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.649-652,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436