1.

Conference Proceedings
Conference Proceedings
1. Improved Surface Morphology And Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown by MOCVD Using Different Growth Parameters
Florescu, D. ; Passman, E. ; Lu, D. ; Lee, D.S. ; Parekh, A. ; Ramer, J.C. ; Stall, R.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.70-75,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
2.

Conference Proceedings
Conference Proceedings
2. *Auger and electrical analysis of metal contacts to p-GaN
King, D.J. ; Zhang, L. ; Ramer, J.C. ; Rice, A. ; Malloy, K.J. ; Hersee, S.D. ; Lester, L.F. ; Wood, Mark
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.180-194,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
3.

Conference Proceedings
Conference Proceedings
3. Ohmic Contacts to n- and p- GaN
Lester, L.F. ; King, D.J. ; Zhang, L. ; Ramer, J.C. ; Hersee, S.D.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.170-177,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
4.

Conference Proceedings
Conference Proceedings
4. Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes
Lee, J. ; Eliseev, P.G. ; Osinski, M. ; Lee, D.-S. ; Ramer, J.C. ; Florescu, D.I. ; Armour, E.A.
Pub. info.: Physics and Simulation of Optoelectronic Devices XII.  pp.408-415,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5349