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Conference Proceedings

1. Surface activity of magnesium during GaN molecular beam epitaxial growth

Ramachandran, V. ; Feenstra, R. M. ; Northrup, J. E. ; Greve, D. W.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W3.65.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

2. TEM study of the morphology of GaN/SiC(0001) grown at various temperatures by MBE

Sarney, W. L. ; Salamanca-Riba, L. ; Ramachandran, V. ; Feenstra, R. M. ; Greve, D. W.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W3.47.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

3. Scanning-Tunneling-Microscopy Observation of Surface Reconstruction of GaN on Sapphire and 6H-SiC

Smith, A. R. ; Ramachandran, V. ; Feenstra, R. M. ; Greve, D. W. ; Neugebauer, J. ; Northrup, J. E. ; Shin, M. ; Skowronski, M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.363-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

4. Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)

Hartman, J. D. ; Naniwae, K. ; Petrich, C. ; Ramachandran, V. ; Feenstra, R. M. ; Nemanich, R. J. ; Davis, R. F.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.353-356, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)