1.

Conference Proceedings
Conference Proceedings
1. Investigation of Interface State Density with Varied SiO2 Thickness in La2O3/SiO2/4H-SiC MOS Capacitors
Y.C. Wang ; Y.M. Zhang ; R.X. Jia
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.689-692,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates
J.C. Hu ; Y.M. Zhang ; R.X. Jia ; Y.H. Wang ; B. Xin
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.181-184,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823