1.

Conference Proceedings
Conference Proceedings
1. Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
N.A. Mahadik ; R.E. Stahlbush ; E.A. Imhoff ; M.J. Tadjer ; G.E. Ruland
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.233-236,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
M.J. Tadjer ; N.A. Mahadik ; B.N. Feigelson ; R.E. Stahlbush ; E.A. Imhoff
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.297-302,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal
R.E. Stahlbush ; N.A. Mahadik ; Q.J. Zhang ; A.A. Burk ; B.A. Hull
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.387-390,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
N.A. Mahadik ; R.E. Stahlbush ; J.D. Caldwell ; M.J. O'Loughlin ; A.A. Burk
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.297-300,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
N.A. Mahadik ; R.E. Stahlbush ; J.D. Caldwell ; K.D. Hobart
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.391-394,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
R.E. Stahlbush ; Q.C.J. Zhang ; A.K. Agarwal ; N.A. Mahadik
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.387-390,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
R.L. Myers-Ward ; B.L. VanMil ; R.E. Stahlbush ; S.L. Katz ; J.M. McCrate
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.105-108,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Basal Plane Dislocation Mitigation in 8° Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
B.L. Vanmil ; R.E. Stahlbush ; R.L. Myers-Ward ; Y.N. Picard ; S.A. Kitt
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.61-66,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
9.

Conference Proceedings
Conference Proceedings
9. Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
S.H. Ryu ; F. Husna ; S.K. Haney ; Q.C.J. Zhang ; R.E. Stahlbush
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1127-1130,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
10.

Conference Proceedings
Conference Proceedings
10. Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
J.D. Caldwell ; R.E. Stahlbush ; O.J. Glembocki ; K.D. Hobart ; K.X. Liu
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.273-278,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603