1.

Conference Proceedings
Conference Proceedings
1. Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes
J. Schaeffer ; M. Raymond ; D. Gilmer ; R. Gregory ; B. Taylor
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.3-10,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. HfO2 Gate Dielectrics Deposited via Tetrakis Dlethylamido Hafnium
J. Schaeffer ; N. V. Edwards ; R. Liu ; D. Roan ; B. Hradsky ; R. Gregory ; J. Kulik ; E. Duda ; L. Contreras ; J. Christiansen ; S. Zollner ; P. Tobin ; B.-Y. Nguyen ; R. Nieh ; M. Ramon ; R. Rao ; R. Hegde ; R. Rai ; J. Baker ; S. Voight
Pub. info.: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues.  pp.49-62,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-28
3.

Conference Proceedings
Conference Proceedings
3. Electroless Plated CoWB and COWPB Films for Copper Cap Applications
V. Mathew ; L. Michacison ; S. Garcia ; E. Acosta ; D. Werho ; R. Gregory ; Z. Jiang ; K. Kim
Pub. info.: Copper interconnects, new contact and barrier metallurgies/structures, and low-k interlevel dielectrics III : at the 208th ECS meeting, October 16-21, 2005, Los Angeles, California, USA.  pp.11-18,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(11)