1.

Conference Proceedings
Conference Proceedings
1. Breakdown Characteristics of High-k Gate Dielectrics with Metal Gates
D. Misra ; N. Chowdhury ; G. Bersuker ; C. Young ; R. Choi
Pub. info.: ULSI process integration 5.  pp.143-160,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(6)
2.

Conference Proceedings
Conference Proceedings
2. Charge Trapping Effects in High-k Transistors
C. Bersuker ; J. Sim ; C. Young ; R. Choi ; C. Park ; B. Lee
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.663-670,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
3.

Conference Proceedings
Conference Proceedings
3. Nitrogen Incorporation and High Temperature Forming Gas Anneal For High-K Gate Dielectrics
J. C. Lee ; R. Choi ; K. Onishi ; N. Cho ; C. Kang ; Y. Kim ; S. Krishnan
Pub. info.: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues.  pp.171-178,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-28
4.

Conference Proceedings
Conference Proceedings
4. Electrical Characterization Methodologies for the Assessment of High-κ Gate Dielectric Stacks
C.D. Young ; G. Bersuker ; D. Heh ; A. Neugroschel ; R. Choi
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.335-346,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
5.

Conference Proceedings
Conference Proceedings
5. High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k
S. Song ; G. L. Zhang ; S. Bae ; P. Kirsch ; P. Majhi ; R. Choi ; B. Lee
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.609-624,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
6.

Conference Proceedings
Conference Proceedings
6. Identifying Contributions to Electrical Instability in High-k Gate Stacks: As-Grown vs. Generated Defects
G. Bersuker ; P. Lysaght ; R. Choi
Pub. info.: Silicon nitride, silicon dioxide, and emerging dielectrics 9.  pp.687-704,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(3)
7.

Conference Proceedings
Conference Proceedings
7. Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability
P. Kirsch ; M. Quevedo-Lopez ; S. Krishnan ; S. Song ; R. Choi ; P. Majhi ; Y. Senzaki ; G. Bersuker ; B. Lee
Pub. info.: Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA.  pp.15-28,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(10)
8.

Conference Proceedings
Conference Proceedings
8. High and Low Stress Voltage Instabilities in High-K Gate Stacks
G. Bersuker ; C. Young ; D. Heh ; R. Choi ; B. Lee
Pub. info.: 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT).  pp.99-103,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 8(1)