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10 results

Conference Proceedings

1. Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

S. Contreras ; L. Konczewicz ; P. Kwasnicki ; R. Arvinte ; H. Peyre

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.249-252, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy

P. Kwasnicki ; R. Arvinte ; H. Peyre ; M. Zielinski ; S. Juillaguet

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.237-240, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

3. Optical Characterization of p-Type 4H-SiC Epilayers

G. Liaugaudas ; D. Dargis ; P. Kwasnicki ; H. Peyre ; R. Arvinte

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.249-252, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

P. Kwasnicki ; R. Arvinte ; H. Peyre ; M. Zielinski ; L. Konczewicz

Pub. info.:	HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France. pp.51-56, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	806

Conference Proceedings

5. Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

R. Arvinte ; M. Zielinski ; T. Chassagne ; M. Portail ; A. Michon

Pub. info.:	HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France. pp.45-50, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	806

Conference Proceedings

6. p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

M. Zielinski ; R. Arvinte ; T. Chassagne ; A. Michon ; M. Portail

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.137-142, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

7. Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

T. Sledziewski ; S. Beljakowa ; K. Alassaad ; P. Kwasnicki ; R. Arvinte

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.261-264, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates

S. Contreras ; L. Konczewicz ; R. Arvinte ; J. Ben Messaoud ; T.L. Wang ; H. Peyre ; T. Chassagne ; M. Zielinski ; S. Juillaguet

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.275-278, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

Conference Proceedings

9. Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

M. Zielinski ; T. Chassagne ; R. Arvinte ; A. Michon ; M. Portail ; S. Contreras ; S. Juillaguet ; H. Peyre

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.79-82, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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Conference Proceedings

10. Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers

R. Arvinte ; M. Zielinski ; T. Chassagne ; M. Portail ; A. Michon

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.149-152, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

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Author: R. Arvinte