1.

Conference Proceedings
Conference Proceedings
1. Implementation of High-k / Metal Gate in High-Volume Manufacturing
R. Arghavani ; M. Agustine ; K. Ahmed ; C. Cheng ; S. Gandikota
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.131-142,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)
2.

Conference Proceedings
Conference Proceedings
2. Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices
B. Lee ; D. Lichtenwalner ; M. Agustin ; R. Arghavani ; X. Tang
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.123-130,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)