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Conference Proceedings

1. *SILICON CARBIDE: PROGRESS IN CRYSTAL GROWTH

Powell, J. A.

Pub. info.:	Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.159-170, 1987. Pittsburgh, Penn.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	97

Conference Proceedings

2. Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Powell, J. A. ; Neudeek, P. G. ; Trunek, A. J. ; Abel, P. B.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.753-756, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. THE "BUFFER" LAYER IN THE CVD GROWTH OF β-SIC ON (001) SILICON

Cheng, T. T. ; Pirouz, P. ; Powell, J. A.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.229-234, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

4. CHARACTERIZATION OF DEFECT STRUCTURES IN LELY 6H-SiC SINGLE CRYSTALS USING SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY

Huang, W. ; Wang, S. ; Dudley, M. ; Neudeck, P. ; Powell, J. A. ; Fazi, C.

Pub. info.:	Applications of synchrotron radiation techniques to materials science II : symposium held November 27-December 2, 1994, Boston, Massachusetts, USA. pp.313-, 1995. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	375

Conference Proceedings

5. COMPUTER AIDED SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHIC ANALYSIS OF MULTIPOLYTYPE SiC DEVICE CONFIGURATIONS

Huang, W. ; Wang, S. ; Dudley, M. ; Neudeck, P. ; Powell, J. A. ; Fazi, C.

Pub. info.:	Applications of synchrotron radiation techniques to materials science II : symposium held November 27-December 2, 1994, Boston, Massachusetts, USA. pp.327-, 1995. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	375

Conference Proceedings

6. LATTICE DEFECTS IN s-SIC GROWN EPITAXIALLY ON SILICON SUBSTRATES

Pirouz, P. ; Chorey, C. M. ; Cheng, T. T. ; Powell, J. A.

Pub. info.:	Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.399-404, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	91

Conference Proceedings

7. Synchrotron White Beam X-Ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet

Vetter, W. M. ; Dudley, M. ; Huang, W. ; Neudeck, P. ; Powell, J. A.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.469-472, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. Synchrotron White Beam Topography Studies of 2H SiC Crystals

Dudley, M. ; Huang, W. ; Vetter, W. M. ; Neudeck, P. ; Powell, J. A.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.465-468, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. Defects in 4H Silicon Carbide CVD Epilayers

Zhou, L. ; Pirouz, P. ; Powell, J. A.

Pub. info.:	Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.631-, 1997. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	442

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Technical Paper

10. Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

Powell, J. A. ; Larkin, D. J. ; Abel, P. B. ; Zhou, L. ; Pirouz, P.

Pub. info.:

NASA Technical Reports. 19970020726 (NASA-TM-112470), pp.1-6, 1996. National Aeronautics and Space Adminstration

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Author: Powell, J. A.