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11 results

Conference Proceedings

1. HIGH SPATIAL RESOLUTION TEM STUDY OF THIN FILM METAL/6H-SiC INTERFACES

Bow, J.S. ; Porter, L.M. ; Kim, M.J. ; Carpenter, R.W. ; Davis, R.F.

Pub. info.:	Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.571-576, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	280

Conference Proceedings

2. Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

Tumakha, S.P. ; Porter, L.M. ; Ewing, D.J. ; Wahab, Q. ; Ma, X.Y. ; Sudarshan, T.S. ; Brillson, L.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.907-910, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. A Study of Inhomogeneous Schottky Diodcs on n-Type 4H-SiC

Ewing, D.J. ; Wahab, Q. ; Tumakha, S.P. ; Brillson, L.J. ; Ma, X.Y. ; Sudarshan, T.S. ; Porter, L.M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.911-914, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. CHEMICAL AND ELECTRICAL MECHANISMS IN TITANIUM, PLATINUM, AND HAFNIUM CONTACTS TO ALPHA (6H) SILICON CARBIDE

Porter, L.M. ; Glass, R.C. ; Davis, R.F. ; Bow, J.S. ; Kim, M.J. ; Carpenter, R.W.

Pub. info.:	Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A.. pp.471-480, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	282

Conference Proceedings

5. Four Current Examples of Characterization of Silicon Carbide

Bai, S. ; Ke, Yue ; Shishkin, Y. ; Shigiltchoff, O. ; Devaty, R.P. ; Choyke, W.J. ; Strauch, D. ; Stojetz, B. ; Dorner, B. ; Hobgood, D. ; Serrano, J. ; Cardona, M. ; Nagasawa, H. ; Kimoto, T. ; Porter, L.M.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.151-162, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

6. Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Shigiltchoff, O. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M. ; Devaty, R.P. ; Choyke, W.J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.921-924, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Observation of a Non-Stoichiometric Layer at the Silicon Dioxide-Silicon Carbide Interface: Effect of Oxidation Temperature and Post-Oxidation Processing Conditions

Chang, K.C. ; Wahab, Q. ; Porter, L.M.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

8. Effects of Surface and Interlayer Processing Conditions on Selected Ohmic Contact Metallizations for p-Type Silicon Carbide

Porter, L.M. ; Jang, T. ; Worren, T. ; Chang, K.C. ; Papanicolaou, N.A. ; Erickson, J.W.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

9. Investigation of Factore Limiting the High Temperature Stability of W/WC/TaC/SiC Ohmic Contacts to n-Type 6H-SiC

Jang, T. ; Odekirk, B. ; Porter, L.M.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

10.

Conference Proceedings

10. Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Shigiltchoff, O. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M. ; Devaty, R.P. ; Choyke, W.J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.921-924, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Porter, L.M.