1.

Conference Proceedings
Conference Proceedings
1. PARAMAGNETIC NITROGEN DEFECTS IN SILICON NITRIDE
Warren, W.L. ; Kanicki, J. ; Robertson, J. ; Poindexter, E.H.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.101-106,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
2.

Conference Proceedings
Conference Proceedings
2. OBSERVATION OF PARAMAGNETIC SILICON DANGLING ORBITALS IN LUMINESCENT POROUS SILICON
Rong, F.C. ; Poindexter, E.H. ; Harvey, J.F. ; Morton, D.C. ; Lux, R.A. ; Gerardi, G.J.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.167-172,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
3.

Conference Proceedings
Conference Proceedings
3. GaAs SURFACE STABILIZATION BY VACUUM ANNEAL WITH SiO
Gerardi, G.J. ; Rong, F.C. ; Poindexter, E.H. ; Harmatz, M. ; Shen, H. ; Warren, W.L.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.601-606,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
4.

Conference Proceedings
Conference Proceedings
4. Paramagnetic Point Defects in Amorphous Thin Films of 5i02 and Si3N4: An Update
Poindexter, E.H. ; Warren, W.L.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.3-12,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
5.

Conference Proceedings
Conference Proceedings
5. The Pb1 Center at the Si-SiO2 Interface: Updated Evidence and Emerging Models
Stahis, J.H. ; Cartier, E. ; Edwards, A.H. ; Poindexter, E.H.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.259-274,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10
6.

Conference Proceedings
Conference Proceedings
6. LOW -TEMPERATURE PECVD Si3N4 FILMS FOR GaAs ENCAPSULATION AND PASSIVATION
Pfeffer, R.L. ; Gerardi, G.J. ; Lux, R.A. ; Jones, K.A. ; Poindexter, E.H. ; Chang, W.H. ; Devine, R.A.B.
Pub. info.: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.227-232,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 165
7.

Conference Proceedings
Conference Proceedings
7. PROCESS-INDUCED POINT DEFECTS IN OXIDEZ SILICON STRUCTURES
Caplan, P.J. ; Poindexter, E.H. ; Vasudev, P.K. ; Henderson, R.C.
Pub. info.: Science and technology of microfabrication : symposium held December 4-5, 1986, Boston, Massachusetts, U.S.A..  pp.241-246,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 76
8.

Conference Proceedings
Conference Proceedings
8. Contribution of Phi Centers to Nlidgap Interface Trap Density in Oxidized (100) Silicon Wafers
Poindexter, E.H. ; Gerardi, G.J. ; Keeble, D.J.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.120-127,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
9.

Conference Proceedings
Conference Proceedings
9. Hydrogen Speciation in Electronic Silica
Poindexter, E.H. ; Gerardi, G.J. ; Keeble, D.J.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.172-183,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1