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Conference Proceedings

1. Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS

Aboughe-Nze, P. ; Planes, N. ; Ravetz, M. ; Fraisse, B. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Monteil, Y. ; Rushworth, S. ; Camassel, J.

Pub. info.:	Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia. pp.92-99, 1999. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-35

Conference Proceedings

2. Effect of silicon nitride and silicon dioxide bonding on the residual stress in layer-transferred SOI

Tiberj, A. ; Caniassel, I. ; Planes, N. ; Stoemenos, Y. ; Moriceau, H. ; Rayssac, O.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.117-122, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

Conference Proceedings

3. Characterization of 3C-SiC/SOI Deposited with HMDS

Planes, N. ; Aboughe-Nze, P. ; Ravetz, M. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Fraisse, B. ; Camassel, J. ; Monteil, Y. ; Rushworth, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.599-602, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

4. SOL Thinning Effects on 3C-SiC on SOI

Planes, N. ; Moller, H. ; Camassel, J. ; Stoemenos, Y. ; Falkovski, L. ; Eickhoff, M. ; Krotz, G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.301-304, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)