1.

Conference Proceedings
Conference Proceedings
1. Real Time Spectroscopic Ellipsometry: A New Tool to Characterize SOI Wafers
Boher, P. ; Piel, J.P. ; Stehle, J.L.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.249-256,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36
2.

Conference Proceedings
Conference Proceedings
2. * Characterization of ultra-thin Gate Dielectrics by Grazing X-Ray Reflectance and Spectroscopic Ellipsometry on the Same Instrument
Boher, P. ; Stehle, J.L. ; Defranoux, C. ; Bourtault, S. ; Piel, J.P. ; Evrard, P.
Pub. info.: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.67-78,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-9
3.

Conference Proceedings
Conference Proceedings
3. SPECTROSCOPIC ELLIPSOMETRY AS A NON-DESTRUCTIVE TECHNIQUE FOR CHARACTERIZATION OF ATOMIC-SCALE INTERFACES
Stehle, J.L. ; Piel, J.P. ; Lecat, J.H. ; Pickering, C. ; Hammond, L.C.
Pub. info.: Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A..  pp.459-464,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 159
4.

Conference Proceedings
Conference Proceedings
4. Spectroscopic Ellipsometry Applied to the Characterization of GaN and AIGaN/GaN Heterostructures
Boher, P. ; Bourtault, S. ; Piel, J.P.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.258-264,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
5.

Conference Proceedings
Conference Proceedings
5. Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO2, Al2O3 and HfAIO x Thin Layers for High K Dielectrics
Boher, P. ; Defranoux, C. ; Bourtauld, S. ; Piel, J.P. ; Bender, H.
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah.  pp.305-315,  2003.  Pennington, NJ.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5133
6.

Conference Proceedings
Conference Proceedings
6. Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO2, A1203 and HfAIOx Thin Layers for High k Dielectrics
Boher, P. ; Defranoux, C. ; Bourtauld, S. ; Piel, J.P. ; Bender, H.
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah.  pp.305-315,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-3