1.

Conference Proceedings
Conference Proceedings
1. INTERFACIAL QUALITY OF STRAINED-LAYER InGaAs/GaAs QUANTUM WELL LASERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY
Zhang, G. ; Ovtchinnikov, A. ; Pessa, M.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.153-160,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
2.

Conference Proceedings
Conference Proceedings
2. Origin of improved luminescence efficiency after annealing of Ga(In)Nas materials grown by molecular beam epitaxy
Li, W. ; Pessa, M. ; Ahlgren, T. ; Dekker, J.
Pub. info.: Photodetector materials and devices VII : 21-23 January 2002, San Jose, USA.  pp.207-212,  2002.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4650
3.

Conference Proceedings
Conference Proceedings
3. Visible Vertical Cavity Light Emitters for Fibre Optical Communication
Saarinen, M. ; Vilokkinen, V. ; Xiang, P.Sipil%o N. ; Orsila, S. ; Guina, M. ; Melanen, P. ; Dumitrescu, M. ; Uusimaa, P ; Savolainen, P ; Pessa, M.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.49-68,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
4.

Conference Proceedings
Conference Proceedings
4. X-ray analysis of strain relaxation in multilayer systems InxGa1-xAS1-yNy/GaAs
Pessa, M. ; Pavelescu, E.-M. ; Fodchuk, I. M. ; Gevyk, V. B. ; Shpak, A. P. ; Molodkin, V. B. ; Kislovskii, E. N. ; Olikhovskii, S. I.
Pub. info.: Sixth International Conference on Correlation Optics : 16-19 September 2003, Chernivtsi, Ukraine.  pp.229-237,  2004.  Bellingham, Wash., USA.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5477
5.

Conference Proceedings
Conference Proceedings
5. *ATOMIC LAYER EPITAXY OF DILUTED MAGNETIC SEMICONDUCTORS
Pessa, M. ; Lilja, J. ; Jylha, O. ; Ishiko, M. ; Asonen, H.
Pub. info.: Diluted magnetic (semimagnetic) semiconductors.  pp.303-310,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 89
6.

Conference Proceedings
Conference Proceedings
6. Origin of Improved Luminescence Efficiency After Annealing of Ga(In)Nas Materials Grown by Molecular Beam Epitaxy (Invited)
Li, W. ; Pessa, M. ; Ahlgren, T. ; Dekker, J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.18-28,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
7.

Conference Proceedings
Conference Proceedings
7. Review of Al-Free 980 nm Pump Lasers for EDFA's
Pessa, M. ; Nappi, J. ; Ovtchinnikov, A. ; Savolainen, P. ; Asonen, H.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.224-233,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
8.

Conference Proceedings
Conference Proceedings
8. Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN
Chen, W.M. ; Thinh, N.Q. ; Buyanova, I.A. ; Hai, P.N. ; Xin, H.P. ; Tu, C.W. ; Li, Wei ; Pessa, M.
Pub. info.: Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.  pp.67-72,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 692
9.

Conference Proceedings
Conference Proceedings
9. Identification of the Native Vacancy Defects in ZnSxSe1-x and MgyZn1-ySxSe1-x by Positron Annihilation
Saarinen, K. ; Laine, T. ; Skog, K. ; Oila, J. ; Hautojarvi, P. ; Rakennus, K. ; Uusimaa, P. ; Salokatve, A. ; Pessa, M.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.567-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
10.

Conference Proceedings
Conference Proceedings
10. Test Production of GaInP/GaAs Cascade Space Solar Cells by a High-Throughput Molecular Beam Epitaxy System
Lammasniemi, J. ; Kazantsev, A.B. ; Jaakkola, R. ; Aho, R. ; Maekelae, T. ; Pessa, M. ; Ovtchinnikov, A. ; Asonen, H. ; Robben, A. ; Bogus, K.
Pub. info.: Proceedings of the Fifth European Space Power Conference (ESPC) : Tarragona, Spain, 21-25 September 1998.  pp.539-542,  1998.  Noordwijk, The Netherlands.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 416