1.

Conference Proceedings
Conference Proceedings
1. LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices
Di Forte Poisson, M-A. ; Magis, M. ; Tordjman, M. ; Aubry, R. ; Pesohang, M. ; Delage, S.L. ; Persio, J. Di ; Grimbert, B. ; Hoel, V. ; Delos, E. ; Ducatteau, D. ; Gaquiere, C.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.107-112,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
2.

Conference Proceedings
Conference Proceedings
2. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. ; Ellison, A. ; Hallin, C. ; Henry, A. ; Persio, J. Di ; Martinez, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1175-1178,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)