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31 results

Conference Proceedings

1. High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes

Levinshtein, M.E. ; Ivanov, P.A. ; Boltovets, M.S. ; Krivutsa, V.A. ; Palmour, J.W. ; Das, M.K. ; Hull, B.A.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1339-1342, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature

Richmond, J. ; Ryu, S.H. ; Krishnaswami, S. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1445-1448, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs

Ivanov, P.A. ; Levinshtein, M.E. ; Agarwal, A.K. ; Krishnaswami, S. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1441-1444, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

Krishnaswami, S. ; Agarwal, A.K. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1437-1440, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs

Agarwal, A.K ; Husna, F. ; Haley, J. ; Bartlow, H. ; McCalpin, B. ; Krishnaswami, S. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1413-1416, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

Agarwal, A.K. ; Krishnaswami, S. ; Damsky, B. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1397-1400, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

Zhang, Q.C. ; Ryu, S.H. ; Jonas, C. ; Agarwal, A.K. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1405-1408, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

8. Energy Efficiency: The Commercial Pull for SiC Devices

Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1129-1134, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

9. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.141-146, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

10.

Conference Proceedings

10. *EPITAXIAL THIN FILM GROWTH AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE ALPHA AND BETA SILICON CARBIDE

Davis, Robert F. ; Palmour, J.W. ; Edmond, J.A.

Pub. info.:	Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.463-474, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	162

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Author: Palmour, J.W.