1.

Conference Proceedings
Conference Proceedings
1. Signal Modulated OPFET Behaviour Under Back Illumination
Roy,Nandita Saha ; Pal,B.B. ; Khan,R.U.
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.645-648,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
2.

Conference Proceedings
Conference Proceedings
2. I.V. Characteristics of a Generalized DC Model for GaAs OPFET
Lohani,R.B. ; Pal,B.B.
Pub. info.: Physics of - Semiconductor Devices -.  Part 2  pp.918-920,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
3.

Conference Proceedings
Conference Proceedings
3. Schrodinger's wave function and related device characteristics in MODFET under illumination
Singh,P.K. ; Pal,B.B.
Pub. info.: Selected papers from Photonics India '98 : 14-18 December 1998, New Delhi, India.  pp.252-259,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3666
4.

Conference Proceedings
Conference Proceedings
4. Ion Implanted GaAs MESFET Characteristics for Different Dopants and Implanted Energy
Singh,Jai Shankar ; Khan,R.U. ; Pal,B.B. ; Chattopadhyay,S.N.
Pub. info.: Semiconductor Devices.  pp.130-132,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
5.

Conference Proceedings
Conference Proceedings
5. The Transient and DC Characteristics of a High Electron Mobility Photo Transistor
Pal,B.B.
Pub. info.: Semiconductor Devices.  pp.94-99,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
6.

Conference Proceedings
Conference Proceedings
6. Effect of Concentration Dependent Carrier Mobility and Life Time on GaAs OPFET Characteristics
Shubha ; Lohani,R.B. ; Khan,R.U. ; Pal,B.B.
Pub. info.: Semiconductor Devices.  pp.125-126,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
7.

Conference Proceedings
Conference Proceedings
7. InAlAs/InGaAs/InP Modulation Doped Optoelectronic Field Effect Transistor(MODOFET)for 1.3-1.6ｦﾌm Systems
Mitra,H. ; Puri,M. ; Singh,S. ; Pal,B.B.
Pub. info.: Semiconductor Devices.  pp.127-129,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733