1.

Conference Proceedings
Conference Proceedings
1. Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
K.M. Speer ; D.J. Spry ; A.J. Trunek ; P.G. Neudeck ; M.A. Crimp ; J.T. Hile ; C. Burda ; P. Pirouz
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.223-226,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
A.J. Trunek ; P.G. Neudeck ; D.J. Spry
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.117-120,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design
P.G. Neudeck ; L.Y. Chen ; D.J. Spry ; G.M. Beheim ; C.W. Chang
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.781-784,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 ° C to 500 ° C
P.G. Neudeck ; D.J. Spry ; L.Y. Chen
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.903-907,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Processing and Prolonged 500 ° C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
D.J. Spry ; P.G. Neudeck ; L.Y. Chen ; D. Lukco ; C.W. Chang
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.908-912,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
K.M. Speer ; P.G. Neudeck ; M. Mehregany
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.777-780,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Prolonged 500°C Operation of 6H-SiC JFET Integrated Circuitry
P.G. Neudeck ; D.J. Spry ; L.Y. Chen ; C.W. Chang ; G.M. Beheim
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.929-934,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station
P.G. Neudeck ; N.F. Prokop ; L.C. Greer III ; L.Y. Chen ; M.J. Krasowski
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.579-582,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
9.

Conference Proceedings
Conference Proceedings
9. Use of Vacuum as a Gate Dielectric: The SiC VacFET
K.M. Speer ; P.G. Neudeck ; M. Mehregany
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.657-661,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
10.

Conference Proceedings
Conference Proceedings
10. HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces
A.J. Trunek ; J.A. Powell ; P.G. Neudeck ; M. Mrdenovich
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.593-596,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617