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12 results

Conference Proceedings

1. Application Of HCl Gas Phase Etch In The Production Of Novel Devices

A.Y. Hikavyy ; R. Rooyackers ; P. Verheyen ; F. Leys ; G. Vellianitis

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment. pp.329-335, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	13(1)

Conference Proceedings

2. Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions

M.B. Gonzalez ; N. Thomas ; E. Simoen ; P. Verheyen ; A. Hikavyy

Pub. info.:	Analytical and diagnostic techniques for semiconductor materials, devices and processes 7. pp.47-53, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(3)

Conference Proceedings

3. Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes

E.R. Simoen ; M.B. Gonzalez ; G. Eneman ; P. Verheyen ; C.L. Claeys

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.655-665, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

4. Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

R. Loo ; P. Verheyen ; R. Rooyackers ; C. Walczyk ; F. Leys

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.453-465, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

5. The Combination of Embedded Si_1-xGe_x S/D and Metal Gate Options for High Performance pMOS Transistors

P. Verheyen ; S. Severi ; G. Eneman ; R. Loo ; D. Shamiryan

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.697-711, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

6. Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices

E.R. Simoen ; G. Eneman ; P. Verheyen ; R. Loo ; M. Bargallo Gonzalez

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.513-527, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

Conference Proceedings

7. Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si_1-xGe_x Source /Drain Junctions

M.B. Gonzalez ; E. Simoen ; E. Rosseel ; P. Verheyen ; L. Souriau

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment. pp.23-30, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	13(1)

Conference Proceedings

8. Relaxation-Induced Excess Leakage Current in Recessed Si₁₋xGex Source/Drain Junctions

M. B. Gonzalez ; M. Chowdhury ; N. Bhouri ; P. Verheyen ; F. Leys ; O. Richard ; R. Loo ; C. Claeys ; B. Simoen ; V. Machkaoutsan ; P. Tomasini ; S. Thomas ; J. Lu ; J. Weijtmans ; R. Wise

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment. pp.389-396, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	6(1)

Conference Proceedings

9. Improved Sputter Deposition Hardware

W. De Bosscher ; P. Verheyen

Pub. info.:	44th Annual Technical Conference proceedings, April 21-26, 2001, Philadelphia, Pennsylvania. pp.505-507, 2001. Albuquerque, NM. Society of Vacuum Coaters
Title of ser.:	Annual Technical Conference of Society of Vacuum Coaters
Ser. no.:	44

10.

Conference Proceedings

10. Study of Ni-Silicide Contacts to Si:C Source/Drain.

S. Mertens ; Y. Cho ; F. Nouri ; R. Schreutelkamp ; Y. Kim ; P. Verheyen ; J. Steenbergen ; C. Vrancken ; H. Bender ; O. Richard ; B. Van Daele ; W. Vandervorst ; P. Absil ; S. Kubicek ; C. Demeurisse ; Z. Tokei ; A. Lauwers ; L. Geenen

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment. pp.139-148, 2006. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(2)

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Author: P. Verheyen