1.

Conference Proceedings
Conference Proceedings
1. AVD and MOCVD TaCN-based Films for Gate Metal Applications on High-κ Gate Dielectrics
Z. Karim ; G. Barbar ; O. Boissière ; P. Lehnen ; C. Lohe
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.557-567,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties
C. Adelmann ; S. Van Elshocht ; P. Lehnen ; T. Canard ; A. Franquet ; C. Zhao ; L. Ragnarsson ; V. Chang ; H. Choi ; Y. Hong-Yu ; S. De Gendt
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.113-120,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
3.

Conference Proceedings
Conference Proceedings
3. Advanced Metal Gate Electrode Options Compatible with ALD and AVD HfSiO x-Based Gate Dielectrics
Z. Karim ; O. Biossiere ; C. Lohe ; Z. Zhang ; C. Manke ; P. Lehnen ; P. K. Baumann ; J. Dalton ; W. Park ; S. Ramanathan ; J. Lindner ; F. Seidel and
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.363-374,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
4.

Conference Proceedings
Conference Proceedings
4. Alternative Gate Dielectric Materials
S. Van Elshocht ; A. Hardy ; S. De Gendt ; C. Adelmann ; P. K. Baumann ; D. P. Brunco ; M. R. Caymax ; F. Conard ; P. Delugas ; P. Lehnen ; O. Richard ; E. Rohr ; D. Shamiryan ; A. Vos ; F. Witters ; P. Zimmerman ; M. K. Van Bael ; J. Mullens ; M. M. Meuris ; M. M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.479-498,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)