1.

Conference Proceedings
Conference Proceedings
1. Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates
B.G. Malm ; J. Hallstedt ; P. Hellström ; M. Ostling
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.529-537,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
2.

Conference Proceedings
Conference Proceedings
2. Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels
M. Östling ; J. Haållstedt ; M. von Haartman ; P. Hellström ; H. Radamson
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.67-72,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)