1.

Conference Proceedings
Conference Proceedings
1. Thick Epilayer for Power Devices
A. Henry ; J. Hassan ; H. Pedersen ; F. Beyer ; J.P. Bergman ; S. Andersson ; E. Janzen ; P. Godignon
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.47-52,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. High Temperature SiC Sensor with an Isolated Package
F. Draghici ; G. Brezeanu ; I. Rusu ; F. Bernea ; P. Godignon
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.1002-1005,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. 4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
M. Alexandru ; V. Banu ; P. Godignon ; M. Vellvehi ; J. Millán
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.1048-1051,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Cryogenic to High Temperature Exploration of 4H-SiC W-SBD
M. Berthou ; B. Asllani ; P. Brosselard ; P. Godignon
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.583-587,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
B. Asllani ; M. Berthou ; D. Tournier ; P. Brosselard ; P. Godignon
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.741-744,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. SiC Power Switches Evaluation for Space Applications Requirements
P. Godignon ; S. Massetti ; X. Jordà ; V. Soler ; J. Moreno
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.852-855,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
7.

Conference Proceedings
Conference Proceedings
7. Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs
M. Alexandru ; V. Banu ; M. Vellvehi ; P. Godignon ; J. Millan
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.104-108,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
8.

Conference Proceedings
Conference Proceedings
8. High Temperature Capability of High Voltage 4H-SiC JBS
M. Berthou ; P. Godignon ; B. Vergne ; P. Brosselard
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.124-128,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
9.

Conference Proceedings
Conference Proceedings
9. Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)
A. Caboni ; N. Camara ; E. Pausas ; N. Mestres ; P. Godignon
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.781-784,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
10.

Conference Proceedings
Conference Proceedings
10. Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications
V. Banu ; P. Godignon ; X. Jordá ; M. Alexandru ; J. Millán
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.754-757,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680