1.

Conference Proceedings
Conference Proceedings
1. Charge Trapping Characteristics of W-La₂O₃-nSi MIS Capacitors After Post-Metallization Annealing PMA in N2
J. Molina ; K. Tachi ; K. Kakushima ; P. Abmet ; K. Tsutsui ; N. Sugli ; T. Hattori ; I. Hiroshi
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.233-244,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
2.

Conference Proceedings
Conference Proceedings
2. Mobility Degradation Analysis for La₂O₃ nMOSFET
J. Ng ; N. Sugii ; K. Kakushima ; P. Abmet ; T. Hattori ; K. Tsutsui ; H. Iwai
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.329-338,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)
3.

Conference Proceedings
Conference Proceedings
3. New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces
K. Shiraishi ; T. Nakayatna ; Y. Akasaka ; S. Miyazaki ; T. Nakaoka ; K. Ohmori ; P. Abmet ; K. Torii ; H. Watanabe ; T. Chikyow ; Y. Nara ; H. Iwai ; K .Yamada
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.25-40,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)