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12 results

Conference Proceedings

1. Chemical-Mechanical Polishing of Metals: the Role of Metal Concentration Gradient

Osseo-Asare, K.

Pub. info.:	Proceedings of the Second International Symposium on Chemical Mechanical Planariarization [sic] in Integrated Circuit Device Manufacturing. pp.173-180, 1998. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-7

Conference Proceedings

2. Chemical-Mechanical Polishing of Tungsten: An Electrophoretic Mobility Investigation of Alumina-Tungstate Interactions

Osseo-Asare, K. ; Khan, A.

Pub. info.:	Proceedings of the Second International Symposium on Chemical Mechanical Planariarization [sic] in Integrated Circuit Device Manufacturing. pp.139-144, 1998. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-7

Conference Proceedings

3. Mechanism of Sulfonate Adsorption at the Silver Iodide-Solution Interface

Osseo-Asare, K. ; Fuerstenau, D. W. ; Ottewill, R. H.

Pub. info.:	Adsorption at interfaces : papers from a symposium honoring Robert D. Vold and Marjorie J. Vold sponsored by the Division of Colloid and Surface Chemistry at the 167th meeting of the American Chemical Society, Los Angeles, Calif., April 2-5, 1974. pp.63-78, 1975. Washington. American Chemical Society
Title of ser.:	ACS symposium series
Ser. no.:	8

Conference Proceedings

4. Estimation of W Polishing Characteristics During W-CMP with Iodate-Based Slurries

Anik, M. ; Osseo-Asare, K.

Pub. info.:	Chemical Mechanical Planarization : proceedings of the International Symposium. pp.330-342, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-21

Conference Proceedings

5. Tungsten CMP: Reduction Behavior of Iodate Ion on Tungsten

Anik, M. ; Osseo-Asare, K.

Pub. info.:	Chemical mechanical planariarization in IC device manufacturing III : proceedings of the international symposium. pp.354-362, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-37

Conference Proceedings

6. Concentration Gradient Effects in Tungsten Chemical Mechanical Polishing

Anik, M. ; Osseo-Asare, K.

Pub. info.:	Chemical Mechanical Planarization : proceedings of the International Symposium. pp.165-172, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-26

Conference Proceedings

7. Aqueous Slurries in Chemical Mechanical Polishing: Adsorption of Silicate Ions by Ceria

Osseo-Asare, K. ; Suphantharida, P.

Pub. info.:	Chemical Mechanical Planarization : proceedings of the International Symposium. pp.222-228, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-26

Conference Proceedings

8. Oxidation and Dissolution Characteristics of Tungsten: Application To Chemical Mechanical Polishing

Anik, M. ; Osseo-Asare, K.

Pub. info.:	Electrochemical processing in ULSI fabrication III : proceedings of the international symposium. pp.234-243, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-8

Conference Proceedings

9. Anodic Dissolution of Cobalt in Ammoniacal Ammonium Carbonate Solution

Lee, J.W. ; Pickering, H.W. ; Osseo-Asare, K.

Pub. info.:	Electrochemistry in mineral and metal processing : proceedings of the international symposium. pp.204-204, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-18

10.

Conference Proceedings

10. Colloids and Surfaces in Chemical Mechanical Polishing: An Adsorptive Model for Abrasive Particle/Oxide Substrate Interactions

Osseo-Asare, K.

Pub. info.:	Chemical Mechanical Planarization : proceedings of the International Symposium. pp.83-91, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-21

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