1.

Conference Proceedings
Conference Proceedings
1. InGaN blue light-emitting diodes with optimized n-GaN layer
Eliashevich,I. ; Li,Y. ; Osinsky,A. ; Tran,C.A. ; Brown,M.G. ; Karlicek,R.F.,Jr.
Pub. info.: Light-emitting diodes : research, manufacturing, and applications III : 27-28 January 1999, San Jose, California.  pp.28-36,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3621
2.

Conference Proceedings
Conference Proceedings
2. Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates
Gaska,R. ; Shur,M.S. ; Yang,J.W. ; Osinsky,A. ; Orlov,A.O. ; Snider,G.L.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1445-1448,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Point Defects in SiGe Epitaxial Layers and Bulk Crystals
Erzgraber,H.B. ; Kissinger,G. ; Krtiger,D. ; Morgenstern,T. ; Schmalz,K. ; Schilz,J. ; Kurten,M. ; Osinsky,A.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.489-494,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147