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Conference Proceedings

1. Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy

Hacke, P. ; Miyoshi, H. ; Hiramatsu, K. ; Okumura, H. ; Yoshida, S. ; Okushi, H.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.549-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

2. New Technique for Ohmic Formation

Hara, S. ; Teraji, T. ; Okushi, H. ; Kajimura, K.

Pub. info.:	Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.. pp.159-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	427

Conference Proceedings

3. Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact

Chen, Y.G. ; Hasegawa, M. ; Yamanaka, S. ; Okushi, H. ; Kobayashi, N.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.945-948, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

Fujimaki, M. ; Ono, Rudi ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Shinohe, T. ; Okushi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.851-854, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Ono, R. ; Fujimaki, M. ; Senzaki, J. ; Tanimoto, S. ; Shinohe, T. ; Okushi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.847-850, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices

Tanimoto, S. ; Kiritani, N. ; Hoshi, M. ; Okushi, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.879-884, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

Na, H.J. ; Kim, H.J. ; Adachi, K. ; Kiritani, N. ; Tanimoto, S. ; Okushi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1383-1386, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures

Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Nagai, K. ; Sekigawa, T. ; Okushi, H. ; Yoshida, S. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1283-1286, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact

Chen, Y.G. ; Hasegawa, M. ; Yamanaka, S. ; Okushi, H. ; Kobayashi, N.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.945-948, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature

Senzaki, J. ; Fukuda, K. ; Imai, S. ; Tanaka, Y. ; Kobayashi, N. ; Tanoue, H. ; Okushi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.865-868, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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