1.

Conference Proceedings
Conference Proceedings
1. Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Clystals
Nakabayashi, M. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.699-702,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Growth of antimonide compound semiconductor on Si(001) substrate (Invited Paper) [6389-24]
Akahane, K. ; Yamamoto, N. ; Gozu, S. ; Ohtani, N. ; Tsuchiya, M.
Pub. info.: Active and passive optical components for communications VI : 3-4 October, 2006, Boston, Massachusetts, USA.  pp.63890O-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6389
3.

Conference Proceedings
Conference Proceedings
3. 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
Aigo, T. ; Sawamura, M. ; Fujimoto, T. ; Katsuno, M ; Yashiro, H. ; Tsuge, H. ; Nakabayashi, M. ; Hoshino, T. ; Ohtani, N.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.153-158,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide
Ohtani, N. ; Takahashi, J. ; Katsuno, M ; Yashiro, H. ; Kanaya, M.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.37-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
5.

Conference Proceedings
Conference Proceedings
5. Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
Nakashima, S. ; Nakatake, Y. ; Yano, Y. ; Harima, H. ; Ohtani, N. ; Katsuno, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.633-636,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Experimental evaluation of spot dancing of laser beam in atmospheric propagation using high-speed camera
Nakamura, M. ; Akiba, M. ; Kuri, T. ; Ohtani, N.
Pub. info.: Atmospheric propagation : 28-29 January 2003, San Jose, California, USA.  pp.149-158,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4976
7.

Conference Proceedings
Conference Proceedings
7. Solubility Behavior of Benzylhexadecyldimethylammonium Salts in Oils
Ohtani, N.
Pub. info.: Proceedings of the International Conference on Colloid and Surface Science, Tokyo, Japan, November 5-8, 2000 : 25th Anniversary of the Division of Colloid and Surface Chemistry, the Chemical Society of Japan.  pp.189-192,  2001.  Amsterdam.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 132
8.

Conference Proceedings
Conference Proceedings
8. Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-Ray Diffractometry
Katsuno, M. ; Ohtani, N. ; Aigo, T. ; Yashiro, H. ; Kanaya, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.493-496,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
9.

Conference Proceedings
Conference Proceedings
9. Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
Kojima, K. ; Ohno, T. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishio, J. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.925-928,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Growth and Defect Reduction of Bulk SiC Crystals
Ohtani, N. ; Fujimoto, T. ; Katsuno, M. ; Aigo, T. ; Yashiro, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.29-34,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393