1.

Conference Proceedings
Conference Proceedings
1. Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-？-nitride semiconductor device heterostructures
Schubert,M. ; Kasic,A. ; Figge,S. ; Diesselberg,M. ; Einfeldt,S. ; Hommel,D. ; Kohler,U. ; As,D.J. ; Off,J. ; Kuhn,B. ; Scholz,F. ; Woollam,J.A. ; Herzinger,C.M.
Pub. info.: Optical metrology roadmap for the semiconductor, optical, and data storage industries II : 2-3 August 2001 San Diego, USA.  pp.58-68,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4449
2.

Conference Proceedings
Conference Proceedings
2. Optical gain and waveguiding in GaN-based quantum well lasers
Heppel,S. ; Wirth,R. ; Im,J.S. ; Off,J. ; Scholz,F. ; Hangleiter,A.
Pub. info.: Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA.  pp.32-40,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3625
3.

Conference Proceedings
Conference Proceedings
3. Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells
Hangleiter,A. ; Heppel,S. ; Off,J. ; Sohmer,A. ; Scholz,F.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1287-1290,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Time-Resolved Spectroscopy on GaN/AIGaN Double Heterostructures and Quantum Wells
Im,J.S. ; Off,J. ; Sohmer,A. ; Scholz,F. ; Hangleiter,A.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1299-1302,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
Wieser,N. ; Klose,M. ; Scholz,F. ; Off,J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1351-1354,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
Wieser,N. ; Klose,M. ; Scholz,F. ; Off,J. ; Dutrieux,Y.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1355-1358,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268