1.

Conference Proceedings
Conference Proceedings
1. The Profile Control of n-type Doping in Low and High Temperature Si Epitaxy for High Frequency Bipolar Transistors
Radamson, H.H. ; Mohadjeri, B. ; Malm, B.G. ; Grahn, J.V. ; Oestling, M. ; Landgren, G.
Pub. info.: CVD XV, proceedings of the fifteenth International Symposium on Chemical Vapor Deposition.  pp.427-434,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-13
2.

Conference Proceedings
Conference Proceedings
2. A High Performance JBS Rectifier - Design Considerations
Dahlquist, F. ; Lendenmann, H. ; Oestling, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.683-686,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Titanium Tungsten (TiW) for Ohmic Contacts to n-and p-Type 4H-SiC
Lee, S.-K. ; Zetterling, C.-M. ; Oestling, M.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
4.

Conference Proceedings
Conference Proceedings
4. High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
Liu, W. ; Zetterling, C.M. ; Oestling, M. ; Eriksson, J. ; Rorsman, N. ; Zirath, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1209-1212,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Extrinsic Base Design of SiC Bipolar Transistors
Danielsson, E. ; Domeij, M. ; Zetterling, C.M. ; Oestling, M. ; Schoner, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1117-1120,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
Lee, H.S. ; Koo, S.M. ; Zetterling, C.M. ; Danielsson, E. ; Domeij, M. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1437-1440,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. SiC JMOSFETs for High-Temperature Stable Circuit Operation
Koo, S.M. ; Zetterling, C.M. ; Lee, H.S. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1445-1450,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide
Zimmermann, U. ; Domeij, M. ; Hallen, A. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1037-1040,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460