1.

Conference Proceedings
Conference Proceedings
1. *SCANNING TUNNELING MICROSCOPY STUDIES OF GaAs HETEROEPITAXIAL GROWTH ON Si
Biegelsen, D. K. ; Bringans, R. D. ; Northrup, J. E. ; Swartz, L. E.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.359-370,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
2.

Conference Proceedings
Conference Proceedings
2. Energetics of AlN Epitaxial Wetting Layers on SiC (0001)
Felice, R. Di ; Northrup, J. E. ; Neugebauer, J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.899-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Inversion Domain Boundaries in GaN Grown on Sapphire
Romano, L. T. ; Northrup, J. E.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.423-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
4.

Conference Proceedings
Conference Proceedings
4. Surface activity of magnesium during GaN molecular beam epitaxial growth
Ramachandran, V. ; Feenstra, R. M. ; Northrup, J. E. ; Greve, D. W.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.65.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
5.

Conference Proceedings
Conference Proceedings
5. Scanning-Tunneling-Microscopy Observation of Surface Reconstruction of GaN on Sapphire and 6H-SiC
Smith, A. R. ; Ramachandran, V. ; Feenstra, R. M. ; Greve, D. W. ; Neugebauer, J. ; Northrup, J. E. ; Shin, M. ; Skowronski, M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.363-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
Chen, H. ; Smith, A. R. ; Feenstra, R. M. ; Greve, D. W. ; Northrup, J. E.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G9.5.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
7.

Conference Proceedings
Conference Proceedings
7. Indium Incorporation and Surface Segregation During InGaN Growth by Molecular Eeam Epitaxy
Chen, Huajie ; Feenstra, R.M. ; Northrup, J. E. ; Neugebauer, J. ; Greve, D.W.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639